C Plane Sapphire Substrate

Basal plane sapphire substrates with one or both surfaces polished are useful for the growth of lll v and ll vl compoounds such as gan for bright blue and green led and laser diodes. The sapphire crystal is arranged in a hexagonal close packed structure with six atomic layers along the c axis see the figure below. We grew the h bn epitaxial film on c plane sapphire substrate by metalorganic vaper phase epitaxy.

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In order to grow a uniform epitaxial layer of gan across the entire surface the surface of the sapphire substrate is tilted slightly along the c plane.

C plane sapphire substrate.

The optical band gap of hexagonal boron nitride h bn epitaxial film is investigated by means of transmittance and reflectance measurements. Other applications include infrared detectors mercury cadmium telluride wafer carriers and general optics. X ray diffraction and reflection high energy electron diffraction reveal that the h bn epitaxial film has a smooth surface and the epitaxial relationship is found to be 0001 h bn 0001 sapphirewith an in plane orientation. C plane sapphire substrates c plane 0001 orientation sapphire polished substrates are used for growth of gan and other iii v and ii vi compounds when manufacturing led s.

Therefore each layer is 0 22 nm thick. Sapphire substrate c plane. Other applications include mercury cadmium telluride for infrared detector applications.

Sapphire Wafer 3inch C Plane Ostech Co Ltd

Sapphire

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